SI7922DN-T1-GE3
SI7922DN-T1-GE3
SI7922DN-T1-GE3
SI7922DN-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI7922DN-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI7922DN-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI7922DN-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI7922DN-T1-GE3
SI7922DN-T1-GE3
Категория
Transistors - FETs, MOSFETs - Arrays
Производитель
Electro-Films (EFI) / Vishay
RoHS
YES
Certification
Доставка
Оплата

{{title}}
{{description}}
{{ isClicked ? 'Представлено' : 'Отправить' }}
Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:SI7922DN-T1-GE3
Description:MOSFET 2N-CH 100V 1.8A 1212-8
Lead Free Status / RoHS Status:
Other NamesSI7922DN-T1-GE3DKR
Package / CasePowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs195 mOhm @ 2.5A, 10V
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds-
Detailed DescriptionMosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
PackagingDigi-Reel®
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Meta Part NumberSI7922DN-T1-GE3DKR-ND
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Drain to Source Voltage (Vdss)100V
Supplier Device PackagePowerPAK® 1212-8 Dual
FET FeatureLogic Level Gate
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C1.8A
Moisture Sensitivity Level (MSL)1 (Unlimited)
FET Type2 N-Channel (Dual)
Vgs(th) (Max) @ Id3.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Base Part NumberSI7922
Power - Max1.3W

Таблицы данных: Work in prgress, stay tuned!

Соответствующая продукция
Close