RN2110MFV,L3F
RN2110MFV,L3F
RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
RN2110MFV,L3F
Категория
Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:RN2110MFV,L3F
Description:X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status:
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageVESM
Meta Part NumberRN2110MFVL3F-ND
Current - Collector Cutoff (Max)100nA (ICBO)
Mounting TypeSurface Mount
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Transistor TypePNP - Pre-Biased
Resistor - Base (R1)4.7 kOhms
Series-
Package / CaseSOT-723
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Manufacturer Standard Lead Time16 Weeks
Other NamesRN2110MFVL3F

Таблицы данных: Work in prgress, stay tuned!

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