PDTA123ES,126
PDTA123ES,126
PDTA123ES,126
  • Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA123ES,126
  • Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA123ES,126
  • Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA123ES,126
PDTA123ES,126
Категория
Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель
Freescale / NXP Semiconductors
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:PDTA123ES,126
Description:TRANS PREBIAS PNP 500MW TO92-3
Lead Free Status / RoHS Status:
Voltage - Collector Emitter Breakdown (Max)50V
Base Part NumberPDTA123
Resistor - Emitter Base (R2)2.2 kOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Current - Collector (Ic) (Max)100mA
Transistor TypePNP - Pre-Biased
PackagingTape & Box (TB)
Supplier Device PackageTO-92-3
Resistor - Base (R1)2.2 kOhms
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Series-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
Other Names934057559126
PDTA123ES AMO
PDTA123ES AMO-ND
Current - Collector Cutoff (Max)1µA
Power - Max500mW
Mounting TypeThrough Hole
Meta Part NumberPDTA123ES,126-ND
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant

Таблицы данных: Work in prgress, stay tuned!

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