NGTB25N120FL3WG
NGTB25N120FL3WG
NGTB25N120FL3WG
NGTB25N120FL3WG
  • Transistors - IGBTs - Single NGTB25N120FL3WG
  • Transistors - IGBTs - Single NGTB25N120FL3WG
  • Transistors - IGBTs - Single NGTB25N120FL3WG
  • Transistors - IGBTs - Single NGTB25N120FL3WG
NGTB25N120FL3WG
Категория
Transistors - IGBTs - Single
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:NGTB25N120FL3WG
Description:IGBT 1200V 100A TO247
Lead Free Status / RoHS Status:
Other NamesNGTB25N120FL3WGOS
Switching Energy1mJ (on), 700µJ (off)
PackagingTube
Manufacturer Standard Lead Time42 Weeks
Power - Max349W
Test Condition600V, 25A, 10 Ohm, 15V
Detailed DescriptionIGBT Trench Field Stop 1200V 100A 349W Through Hole TO-247-3
Current - Collector (Ic) (Max)100A
Supplier Device PackageTO-247-3
Operating Temperature-55°C ~ 175°C (TJ)
Series-
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 25A
Meta Part NumberNGTB25N120FL3WGOS-ND
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C15ns/109ns
Mounting TypeThrough Hole
Input TypeStandard
Package / CaseTO-247-3
Current - Collector Pulsed (Icm)100A
Voltage - Collector Emitter Breakdown (Max)1200V
Reverse Recovery Time (trr)114ns
Gate Charge136nC

Таблицы данных: Work in prgress, stay tuned!

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