MUN2215T1G
MUN2215T1G
MUN2215T1G
MUN2215T1G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased MUN2215T1G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased MUN2215T1G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased MUN2215T1G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased MUN2215T1G
MUN2215T1G
Категория
Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MUN2215T1G
Description:TRANS PREBIAS NPN 338MW SC59
Lead Free Status / RoHS Status:
Power - Max338mW
Supplier Device PackageSC-59
Meta Part NumberMUN2215T1GOSDKR-ND
Other NamesMUN2215T1GOSDKR
Moisture Sensitivity Level (MSL)1 (Unlimited)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
PackagingDigi-Reel®
Series-
Current - Collector Cutoff (Max)500nA
Resistor - Base (R1)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)50V
Manufacturer Standard Lead Time2 Weeks
Current - Collector (Ic) (Max)100mA
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA

Таблицы данных: Work in prgress, stay tuned!

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