FDS8962C
FDS8962C
FDS8962C
FDS8962C
  • Transistors - FETs, MOSFETs - Arrays FDS8962C
  • Transistors - FETs, MOSFETs - Arrays FDS8962C
  • Transistors - FETs, MOSFETs - Arrays FDS8962C
  • Transistors - FETs, MOSFETs - Arrays FDS8962C
FDS8962C
Категория
Transistors - FETs, MOSFETs - Arrays
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:FDS8962C
Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
Lead Free Status / RoHS Status:
Mounting TypeSurface Mount
FET TypeN and P-Channel
Package / Case8-SOIC (0.154, 3.90mm Width)
Supplier Device Package8-SO
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Other NamesFDS8962CCT
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds575pF @ 15V
Current - Continuous Drain (Id) @ 25°C7A, 5A
Meta Part NumberFDS8962CCT-ND
FET FeatureLogic Level Gate
PackagingCut Tape (CT)
SeriesPowerTrench®
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id3V @ 250µA
Detailed DescriptionMosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SO
Moisture Sensitivity Level (MSL)1 (Unlimited)
Drain to Source Voltage (Vdss)30V
Rds On (Max) @ Id, Vgs30 mOhm @ 7A, 10V

Таблицы данных: Work in prgress, stay tuned!

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