EMH59T2R
EMH59T2R
EMH59T2R
EMH59T2R
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased EMH59T2R
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased EMH59T2R
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased EMH59T2R
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased EMH59T2R
EMH59T2R
Категория
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель
LAPIS Technology
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:EMH59T2R
Description:TRANS 2NPN PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status:
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Current - Collector Cutoff (Max)500nA
Series-
Other NamesEMH59T2RDKR
Current - Collector (Ic) (Max)70mA
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Emitter Base (R2)47 kOhms
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 70mA 250MHz 150mW Surface Mount EMT6
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max150mW
Resistor - Base (R1)10 kOhms
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Meta Part NumberEMH59T2RDKR-ND
PackagingDigi-Reel®
Moisture Sensitivity Level (MSL)1 (Unlimited)
Package / CaseSOT-563, SOT-666
Frequency - Transition250MHz
Supplier Device PackageEMT6

Таблицы данных: Work in prgress, stay tuned!

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