MUN5135DW1T1G
MUN5135DW1T1G
MUN5135DW1T1G
MUN5135DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased MUN5135DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased MUN5135DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased MUN5135DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased MUN5135DW1T1G
MUN5135DW1T1G
Категория
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MUN5135DW1T1G
Description:TRANS 2PNP PREBIAS 0.25W SOT363
Lead Free Status / RoHS Status:
Meta Part NumberMUN5135DW1T1GOSCT-ND
Manufacturer Standard Lead Time40 Weeks
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Package / Case6-TSSOP, SC-88, SOT-363
Frequency - Transition-
Resistor - Emitter Base (R2)47 kOhms
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max)50V
Other NamesMUN5135DW1T1GOSCT
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Current - Collector Cutoff (Max)500nA
Supplier Device PackageSC-88/SC70-6/SOT-363
Transistor Type2 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Resistor - Base (R1)2.2 kOhms
Power - Max250mW
Series-
Current - Collector (Ic) (Max)100mA
Moisture Sensitivity Level (MSL)1 (Unlimited)
PackagingCut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V

Таблицы данных: Work in prgress, stay tuned!

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