NE851M33-A
NE851M33-A
NE851M33-A
  • Transistors - Bipolar (BJT) - RF NE851M33-A
  • Transistors - Bipolar (BJT) - RF NE851M33-A
  • Transistors - Bipolar (BJT) - RF NE851M33-A
NE851M33-A
Категория
Transistors - Bipolar (BJT) - RF
Производитель
CEL (California Eastern Laboratories)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:NE851M33-A
Description:TRANSISTOR NPN 2GHZ M33
Lead Free Status / RoHS Status:
Package / Case3-SMD, Flat Leads
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector (Ic) (Max)100mA
Series-
Operating Temperature150°C (TJ)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max)5.5V
Base Part NumberNE851
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 1V
Detailed DescriptionRF Transistor NPN 5.5V 100mA 4.5GHz 130mW Surface Mount 3-SuperMiniMold (M33)
Meta Part NumberNE851M33-A-ND
Noise Figure (dB Typ @ f)1.9dB ~ 2.5dB @ 2GHz
Frequency - Transition4.5GHz
Transistor TypeNPN
Supplier Device Package3-SuperMiniMold (M33)
Mounting TypeSurface Mount
Power - Max130mW
Gain-
PackagingBulk

Таблицы данных: Work in prgress, stay tuned!

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