MMBT5550
MMBT5550
MMBT5550
  • Transistors - Bipolar (BJT) - Single MMBT5550
  • Transistors - Bipolar (BJT) - Single MMBT5550
  • Transistors - Bipolar (BJT) - Single MMBT5550
MMBT5550
Категория
Transistors - Bipolar (BJT) - Single
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MMBT5550
Description:TRANS NPN 140V 0.6A SOT-23
Lead Free Status / RoHS Status:
Operating Temperature-55°C ~ 150°C (TJ)
Base Part NumberMMBT5550
Lead Free Status / RoHS StatusLead free / RoHS Compliant
PackagingDigi-Reel®
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Power - Max350mW
Detailed DescriptionBipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3
Frequency - Transition50MHz
Meta Part NumberMMBT5550DKR-ND
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)140V
Transistor TypeNPN
Package / CaseTO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL)1 (Unlimited)
Series-
Supplier Device PackageSOT-23-3
Current - Collector Cutoff (Max)100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Mounting TypeSurface Mount
Other NamesMMBT5550DKR

Таблицы данных: Work in prgress, stay tuned!

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