MJD253-1G
MJD253-1G
MJD253-1G
MJD253-1G
  • Transistors - Bipolar (BJT) - Single MJD253-1G
  • Transistors - Bipolar (BJT) - Single MJD253-1G
  • Transistors - Bipolar (BJT) - Single MJD253-1G
  • Transistors - Bipolar (BJT) - Single MJD253-1G
MJD253-1G
Категория
Transistors - Bipolar (BJT) - Single
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MJD253-1G
Description:TRANS PNP 100V 4A IPAK
Lead Free Status / RoHS Status:
Frequency - Transition40MHz
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageI-PAK
Other NamesMJD253-1G-ND
MJD253-1GOS
MJD2531G
Power - Max1.4W
Operating Temperature-65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Detailed DescriptionBipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
Meta Part NumberMJD253-1GOS-ND
Base Part NumberMJD253
Voltage - Collector Emitter Breakdown (Max)100V
PackagingTube
Transistor TypePNP
Manufacturer Standard Lead Time4 Weeks
Moisture Sensitivity Level (MSL)1 (Unlimited)
Current - Collector Cutoff (Max)100nA (ICBO)
Series-
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max)4A
Mounting TypeThrough Hole

Таблицы данных: Work in prgress, stay tuned!

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