JANTXV2N5794
JANTXV2N5794
JANTXV2N5794
JANTXV2N5794
  • Transistors - Bipolar (BJT) - Arrays JANTXV2N5794
  • Transistors - Bipolar (BJT) - Arrays JANTXV2N5794
  • Transistors - Bipolar (BJT) - Arrays JANTXV2N5794
  • Transistors - Bipolar (BJT) - Arrays JANTXV2N5794
JANTXV2N5794
Категория
Transistors - Bipolar (BJT) - Arrays
Производитель
Microsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:JANTXV2N5794
Description:TRANS 2NPN 40V 0.6A TO-78
Lead Free Status / RoHS Status:
Power - Max600mW
PackagingBulk
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Detailed DescriptionBipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Through Hole TO-78-6
Frequency - Transition-
Current - Collector Cutoff (Max)10µA (ICBO)
Supplier Device PackageTO-78-6
Package / CaseTO-78-6 Metal Can
SeriesMilitary, MIL-PRF-19500/495
Other Names1086-15606
1086-15606-MIL
Operating Temperature-65°C ~ 200°C (TJ)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max)40V
Meta Part Number1086-15606-ND
Current - Collector (Ic) (Max)600mA
Mounting TypeThrough Hole
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Vce Saturation (Max) @ Ib, Ic900mV @ 30mA, 300mA
Transistor Type2 NPN (Dual)

Таблицы данных: Work in prgress, stay tuned!

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