JAN2N6351
JAN2N6351
JAN2N6351
JAN2N6351
  • Transistors - Bipolar (BJT) - Single JAN2N6351
  • Transistors - Bipolar (BJT) - Single JAN2N6351
  • Transistors - Bipolar (BJT) - Single JAN2N6351
  • Transistors - Bipolar (BJT) - Single JAN2N6351
JAN2N6351
Категория
Transistors - Bipolar (BJT) - Single
Производитель
Microsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:JAN2N6351
Description:TRANS NPN DARL 150V 5A TO-33
Lead Free Status / RoHS Status:
Package / CaseTO-205AC, TO-33-4 Metal Can
Vce Saturation (Max) @ Ib, Ic2.5V @ 10mA, 5A
Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 150V 5A 1W Through Hole TO-33
Current - Collector (Ic) (Max)5A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 5V
Meta Part Number1086-15248-ND
Power - Max1W
SeriesMilitary, MIL-PRF-19500/472
Operating Temperature-65°C ~ 200°C (TJ)
Other Names1086-15248
","1086-15248-MIL
Moisture Sensitivity Level (MSL)1 (Unlimited)
Transistor TypeNPN - Darlington
PackagingBulk
Mounting TypeThrough Hole
Frequency - Transition-
Current - Collector Cutoff (Max)-
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Supplier Device PackageTO-33
Voltage - Collector Emitter Breakdown (Max)150V

Таблицы данных: Work in prgress, stay tuned!

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