IPB100N04S303ATMA1
IPB100N04S303ATMA1
IPB100N04S303ATMA1
IPB100N04S303ATMA1
  • Transistors - FETs, MOSFETs - Single IPB100N04S303ATMA1
  • Transistors - FETs, MOSFETs - Single IPB100N04S303ATMA1
  • Transistors - FETs, MOSFETs - Single IPB100N04S303ATMA1
  • Transistors - FETs, MOSFETs - Single IPB100N04S303ATMA1
IPB100N04S303ATMA1
Категория
Transistors - FETs, MOSFETs - Single
Производитель
Cypress Semiconductor (Infineon Technologies)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:IPB100N04S303ATMA1
Description:MOSFET N-CH 40V 100A TO263-3
Lead Free Status / RoHS Status:
Detailed DescriptionN-Channel 40V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2
Operating Temperature-55°C ~ 175°C (TJ)
Power Dissipation (Max)214W (Tc)
FET Feature-
Other NamesIPB100N04S3-03
IPB100N04S3-03-ND
IPB100N04S3-03TR
IPB100N04S3-03TR-ND
IPB100N04S303
IPB100N04S303ATMA1TR
SP000260847
Moisture Sensitivity Level (MSL)1 (Unlimited)
Drain to Source Voltage (Vdss)40V
TechnologyMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
Supplier Device PackagePG-TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds9600pF @ 25V
Mounting TypeSurface Mount
Vgs (Max)±20V
PackagingTape & Reel (TR)
SeriesOptiMOS™
FET TypeN-Channel
Vgs(th) (Max) @ Id4V @ 150µA
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5 mOhm @ 80A, 10V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Meta Part NumberIPB100N04S303ATMA1TR-ND

Таблицы данных: Work in prgress, stay tuned!

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