HYG011N04LS2C2
HYG011N04LS2C2
HYG011N04LS2C2
HYG011N04LS2C2
  • Transistors - FETs, MOSFETs - Single HYG011N04LS2C2
  • Transistors - FETs, MOSFETs - Single HYG011N04LS2C2
  • Transistors - FETs, MOSFETs - Single HYG011N04LS2C2
  • Transistors - FETs, MOSFETs - Single HYG011N04LS2C2
HYG011N04LS2C2
Категория
Transistors - FETs, MOSFETs - Single
Производитель
HUAYI
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
ModelHYG011N04LS2C2
ManufacturerHUAYI
PackageDFN-8(5.2x5.9)
Pd - Power Dissipation75W
Drain to Source Voltage40V
Current - Continuous Drain(Id)165A
Gate Charge(Qg)89nC@10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Operating Temperature-55℃~+175℃
Number1 N-Channel
Reverse Transfer Capacitance (Crss@Vds)58pF
Input Capacitance(Ciss)5.876nF
TypeN-Channel
Output Capacitance(Coss)1278pF
RDS(on)1.9mΩ@4.5V

Таблицы данных: Work in prgress, stay tuned!

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