BSC0904NSIATMA1
BSC0904NSIATMA1
BSC0904NSIATMA1
BSC0904NSIATMA1
  • Transistors - FETs, MOSFETs - Single BSC0904NSIATMA1
  • Transistors - FETs, MOSFETs - Single BSC0904NSIATMA1
  • Transistors - FETs, MOSFETs - Single BSC0904NSIATMA1
  • Transistors - FETs, MOSFETs - Single BSC0904NSIATMA1
BSC0904NSIATMA1
Категория
Transistors - FETs, MOSFETs - Single
Производитель
Cypress Semiconductor (Infineon Technologies)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:BSC0904NSIATMA1
Description:MOSFET N-CH 30V 20A 8TDSON
Lead Free Status / RoHS Status:
Other NamesBSC0904NSIATMA1CT
BSC0904NSICT
BSC0904NSICT-ND
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Supplier Device PackagePG-TDSON-8
TechnologyMOSFET (Metal Oxide)
Detailed DescriptionN-Channel 30V 20A (Ta), 78A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount PG-TDSON-8
Vgs (Max)±20V
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Drain to Source Voltage (Vdss)30V
PackagingCut Tape (CT)
Meta Part NumberBSC0904NSIATMA1CT-ND
Vgs(th) (Max) @ Id2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Moisture Sensitivity Level (MSL)1 (Unlimited)
FET TypeN-Channel
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5W (Ta), 37W (Tc)
Mounting TypeSurface Mount
Current - Continuous Drain (Id) @ 25°C20A (Ta), 78A (Tc)
SeriesOptiMOS™
Operating Temperature-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
Rds On (Max) @ Id, Vgs3.7 mOhm @ 30A, 10V
FET Feature-

Таблицы данных: Work in prgress, stay tuned!

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